CVD Growth and Characterization of B-SiC for IR Windows
نویسنده
چکیده
The status of transparent SiC for short wave (3–5 μm) windows and domes is reviewed. Transparent β-SiC was fabricated by the pyrolysis of methyltrichlorosilane in the presence of excess H2 and argon in a hot wall, chemical vapor deposition reactor. Characterization of the material indicates that the transparent SiC is a theoretically dense, void free, highly pure (99.9996%) cubic material possessing high optical transmission in the wavelength region 0.5-6 μm, excellent thermal shock resistance and good optical, mechanical, thermal, and electrical properties of interest for windows and domes. Important properties of transparent SiC are compared with those of the other candidate window materials in the 3-5 μm region. Silicon carbide samples of different transparency were characterized to correlate the material transmission with other important material properties. Finally, use of transparent SiC as windows and domes for severe environments is discussed.
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